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| BAR 65-03W Silicon RF Switching Diode Low loss, low capacitance PIN-diode Band switch for TV-tuners Series diode for mobile communication transmit-receiver switch 2 1 VPS05176 1 2 EHA07001 Type BAR 65-03W Maximum Ratings Parameter Diode reverse voltage Forward current Marking M/blue Pin Configuration 1=C 2=A Package SOD-323 Symbol VR IF Top Tstg Value 30 100 -55 ... 125 -55 ... 150 Unit V mA C Operating temperature range Storage temperature 1 Oct-05-1999 BAR 65-03W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance rf rr Unit max. 20 1 nA V typ. 0.93 IR VF - CT 0.6 0.57 0.65 0.56 80 1.8 0.9 0.8 0.95 0.9 - pF 2 Charge carrier life time - Ls Oct-05-1999 ns nH BAR 65-03W Forward current IF = f (VF ) TA = 25C 10 3 mA Forward resistance rf = f(IF) f = 100MHz 3.0 Ohm 10 2 2.4 2.2 2.0 IF rf 10 1 10 0 10 -1 400 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 500 600 700 800 mV 1000 0.0 -1 10 10 0 mA 10 1 VF IF Diode capacitance CT = f (VR) f = 1MHz 1.0 pF Diode capacitance CT = f (VR) f = 100MHz 1.0 pF 0.8 0.8 CT 0.7 CT V 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0 1 2 3 4 5 6 7 8 10 0.2 0 1 2 3 4 5 6 7 8 V 10 VR VR 3 Oct-05-1999 |
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